The design, fabrication, characterization, and modeling of a novel semiconductor device : the metal oxide semiconductor bipolar junction transistor

dc.contributor.author Okada, David N. en_US
dc.date.accessioned 2009-07-15T17:42:51Z
dc.date.available 2009-07-15T17:42:51Z
dc.date.issued 1986 en_US
dc.description Typescript. en_US
dc.description Thesis (Ph. D.)--University of Hawaii at Manoa, 1986. en_US
dc.description Bibliography: leaves 308-310. en_US
dc.description Photocopy. en_US
dc.description xxix, 310 leaves, bound ill. 29 cm en_US
dc.identifier.uri http://hdl.handle.net/10125/9742
dc.language.iso en-US en_US
dc.relation Theses for the degree of Doctor of Philosophy (University of Hawaii at Manoa). Electrical Engineering; no. 2088 en_US
dc.rights All UHM dissertations and theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission from the copyright owner. en_US
dc.subject Bipolar transistors en_US
dc.subject Metal oxide semiconductors en_US
dc.title The design, fabrication, characterization, and modeling of a novel semiconductor device : the metal oxide semiconductor bipolar junction transistor en_US
dc.type Thesis en_US
dc.type.dcmi Text en_US
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