The design, fabrication, characterization, and modeling of a novel semiconductor device : the metal oxide semiconductor bipolar junction transistor

dc.contributor.author	Okada, David N.
dc.date.accessioned	2009-07-15T17:42:51Z
dc.date.available	2009-07-15T17:42:51Z
dc.date.issued	1986
dc.description	Typescript.
dc.description	Thesis (Ph. D.)--University of Hawaii at Manoa, 1986.
dc.description	Bibliography: leaves 308-310.
dc.description	Photocopy.
dc.description	xxix, 310 leaves, bound ill. 29 cm
dc.identifier.uri	http://hdl.handle.net/10125/9742
dc.language.iso	en-US
dc.relation	Theses for the degree of Doctor of Philosophy (University of Hawaii at Manoa). Electrical Engineering; no. 2088
dc.rights	All UHM dissertations and theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission from the copyright owner.
dc.subject	Bipolar transistors
dc.subject	Metal oxide semiconductors
dc.title	The design, fabrication, characterization, and modeling of a novel semiconductor device : the metal oxide semiconductor bipolar junction transistor
dc.type	Thesis
dc.type.dcmi	Text

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