The design, fabrication, characterization, and modeling of a novel semiconductor device : the metal oxide semiconductor bipolar junction transistor
The design, fabrication, characterization, and modeling of a novel semiconductor device : the metal oxide semiconductor bipolar junction transistor
dc.contributor.author | Okada, David N. | en_US |
dc.date.accessioned | 2009-07-15T17:42:51Z | |
dc.date.available | 2009-07-15T17:42:51Z | |
dc.date.issued | 1986 | en_US |
dc.description | Typescript. | en_US |
dc.description | Thesis (Ph. D.)--University of Hawaii at Manoa, 1986. | en_US |
dc.description | Bibliography: leaves 308-310. | en_US |
dc.description | Photocopy. | en_US |
dc.description | xxix, 310 leaves, bound ill. 29 cm | en_US |
dc.identifier.uri | http://hdl.handle.net/10125/9742 | |
dc.language.iso | en-US | en_US |
dc.relation | Theses for the degree of Doctor of Philosophy (University of Hawaii at Manoa). Electrical Engineering; no. 2088 | en_US |
dc.rights | All UHM dissertations and theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission from the copyright owner. | en_US |
dc.subject | Bipolar transistors | en_US |
dc.subject | Metal oxide semiconductors | en_US |
dc.title | The design, fabrication, characterization, and modeling of a novel semiconductor device : the metal oxide semiconductor bipolar junction transistor | en_US |
dc.type | Thesis | en_US |
dc.type.dcmi | Text | en_US |
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