Load-pull measurement and simulation on indium phosphide heterojunction biopolar transistors
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2003-05
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University of Hawaii at Manoa
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Indium-phosphide (InP) based amplifiers have recently attracted a great deal of attention due to their superior power and efficiency characteristics for high-performance telecommunications. A state-of-the-art InP heterojunction bipolar transistor was characterized using an automated load-pull measurement system to determine the optimum load conditions for future applications at 10 GHz. These measurements yielded power-added efficiencies ranging from 54-63% for Class A to Class C/E bias conditions. Simulations using a SPICE model confirmed the accuracy of the model at 10 GHz with simulated efficiencies between 44-58%.
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x, 73 pages
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Theses for the degree of Master of Science (University of Hawaii at Manoa). Electrical Engineering; no. 3784
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