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Load-pull measurement and simulation on indium phosphide heterojunction biopolar transistors

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Item Summary

Title: Load-pull measurement and simulation on indium phosphide heterojunction biopolar transistors
Authors: Shishido, Reid Tadashi
Advisor: Shiroma, Wayne
Issue Date: May 2003
Publisher: University of Hawaii at Manoa
Abstract: Indium-phosphide (InP) based amplifiers have recently attracted a great deal of attention due to their superior power and efficiency characteristics for high-performance telecommunications. A state-of-the-art InP heterojunction bipolar transistor was characterized using an automated load-pull measurement system to determine the optimum load conditions for future applications at 10 GHz. These measurements yielded power-added efficiencies ranging from 54-63% for Class A to Class C/E bias conditions. Simulations using a SPICE model confirmed the accuracy of the model at 10 GHz with simulated efficiencies between 44-58%.
Description: x, 73 leaves
Rights: All UHM dissertations and theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission from the copyright owner.
Appears in Collections:M.S. - Electrical Engineering

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