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http://hdl.handle.net/10125/9742The design, fabrication, characterization, and modeling of a novel semiconductor device : the metal oxide semiconductor bipolar junction transistor
| File | Description | Size | Format | |
|---|---|---|---|---|
| uhm_phd_8707029_r.pdf | Version for non-UH users. Copying/Printing is not permitted | 6.09 MB | Adobe PDF | View/Open |
| uhm_phd_8707029_uh.pdf | Version for UH users | 5.99 MB | Adobe PDF | View/Open |
Item Summary
| Title: | The design, fabrication, characterization, and modeling of a novel semiconductor device : the metal oxide semiconductor bipolar junction transistor |
| Authors: | Okada, David N. |
| Keywords: | Bipolar transistors Metal oxide semiconductors |
| Issue Date: | 1986 |
| Description: | Typescript. Thesis (Ph. D.)--University of Hawaii at Manoa, 1986. Bibliography: leaves 308-310. Photocopy. xxix, 310 leaves, bound ill. 29 cm |
| URI/DOI: | http://hdl.handle.net/10125/9742 |
| Rights: | All UHM dissertations and theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission from the copyright owner. |
| Appears in Collections: | Ph.D. - Electrical Engineering |
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