Please use this identifier to cite or link to this item: http://hdl.handle.net/10125/9742

The design, fabrication, characterization, and modeling of a novel semiconductor device : the metal oxide semiconductor bipolar junction transistor

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Item Summary

Title: The design, fabrication, characterization, and modeling of a novel semiconductor device : the metal oxide semiconductor bipolar junction transistor
Authors: Okada, David N.
Keywords: Bipolar transistors
Metal oxide semiconductors
Issue Date: 1986
Description: Typescript.
Thesis (Ph. D.)--University of Hawaii at Manoa, 1986.
Bibliography: leaves 308-310.
Photocopy.
xxix, 310 leaves, bound ill. 29 cm
URI/DOI: http://hdl.handle.net/10125/9742
Rights: All UHM dissertations and theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission from the copyright owner.
Appears in Collections:Ph.D. - Electrical Engineering



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